IRFU3706

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

280A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Published :

2004

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain-source On Resistance-Max :

0.009Ohm

Terminal Finish :

MATTE TIN OVER NICKEL

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 10V

Avalanche Energy Rating (Eas) :

220 mJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

30A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20V

Power Dissipation-Max :

88W Tc

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Packaging :

Tube

Mounting Type :

Through Hole

Number of Terminations :

3