IRFU3704PBF
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- Mfr.Part #
- IRFU3704PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 75A IPAK
- Stock
- 21,244
- In Stock ：
- 21,244
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Nominal Vgs :
- 3 V
- Rise Time :
- 98ns
- Number of Pins :
- 4
- Mount :
- Through Hole
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1996pF @ 10V
- Turn On Delay Time :
- 98 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Input Capacitance :
- 1.996nF
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- IPAK (TO-251)
- Voltage - Rated DC :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation-Max :
- 90W Tc
- Published :
- 2004
- Drain to Source Resistance :
- 14mOhm
- Dual Supply Voltage :
- 20V
- Continuous Drain Current (ID) :
- 62A
- Turn-Off Delay Time :
- 5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 15A, 10V
- Resistance :
- 9.5Ohm
- Series :
- HEXFET®
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation :
- 90W
- FET Type :
- N-Channel
- Threshold Voltage :
- 3V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current Rating :
- 62A
- Rds On Max :
- 9.5 mΩ
- Lead Free :
- Lead Free
- Datasheets
- IRFU3704PBF
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N-Channel Tube 9.5mOhm @ 15A, 10V ±20V 1996pF @ 10V 19nC @ 4.5V 20V TO-251-3 Short Leads, IPak, TO-251AA
IRFU3704PBF Overview
A device's maximum input capacitance is 1996pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 5 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 14mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 98 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFU3704PBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 5 ns
single MOSFETs transistor is 14mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)
IRFU3704PBF Applications
There are a lot of Infineon Technologies
IRFU3704PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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