IRFU3504ZPBF
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- Mfr.Part #
- IRFU3504ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 42A IPAK
- Stock
- 10,869
- In Stock ：
- 10,869
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Power Dissipation :
- 90W
- Height :
- 6.1mm
- Element Configuration :
- Single
- Rise Time :
- 74ns
- Continuous Drain Current (ID) :
- 77A
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- Width :
- 2.3mm
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 15 ns
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation-Max :
- 90W Tc
- Published :
- 2005
- Voltage - Rated DC :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1510pF @ 25V
- Turn-Off Delay Time :
- 30 ns
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 42A, 10V
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Recovery Time :
- 27 ns
- Current Rating :
- 42A
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 4V
- Length :
- 6.6mm
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 38 ns
- Radiation Hardening :
- No
- Datasheets
- IRFU3504ZPBF
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N-Channel Tube 9m Ω @ 42A, 10V ±20V 1510pF @ 25V 45nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU3504ZPBF Overview
The maximum input capacitance of this device is 1510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 77A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFU3504ZPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V
IRFU3504ZPBF Applications
There are a lot of Infineon Technologies
IRFU3504ZPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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