IRFU3504PBF
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- Mfr.Part #
- IRFU3504PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 30A IPAK
- Stock
- 16,882
- In Stock ：
- 16,882
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 40V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Nominal Vgs :
- 4 V
- Packaging :
- Tube
- Voltage - Rated DC :
- 40V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 40V
- Rds On Max :
- 9.2 mΩ
- Mount :
- Through Hole
- Power Dissipation-Max :
- 140W Tc
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 22 ns
- Current Rating :
- 87A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 87A
- Resistance :
- 9.2Ohm
- Max Operating Temperature :
- 175°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Elements :
- 1
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 53 ns
- Power Dissipation :
- 140W
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 9.2mOhm @ 30A, 10V
- Published :
- 2004
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance :
- 2.15nF
- Supplier Device Package :
- IPAK (TO-251)
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 53ns
- Datasheets
- IRFU3504PBF
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N-Channel Tube 9.2mOhm @ 30A, 10V ±20V 2150pF @ 25V 71nC @ 10V 40V TO-251-3 Short Leads, IPak, TO-251AA
IRFU3504PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2150pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 87A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFU3504PBF Features
a continuous drain current (ID) of 87A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 22 ns
a threshold voltage of 4V
a 40V drain to source voltage (Vdss)
IRFU3504PBF Applications
There are a lot of Infineon Technologies
IRFU3504PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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