IRFU3410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

40 ns

Dual Supply Voltage :

100V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Lead Free :

Lead Free

Threshold Voltage :

4V

Mounting Type :

Through Hole

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Current Rating :

31A

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Width :

2.3876mm

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

6.22mm

Vgs (Max) :

±20V

Power Dissipation-Max :

3W Ta 110W Tc

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Nominal Vgs :

4 V

Resistance :

39Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

110W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Fall Time (Typ) :

13 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Series :

HEXFET®

Continuous Drain Current (ID) :

31A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

27ns

Packaging :

Tube

Terminal Position :

Single

Length :

6.7056mm

Mount :

Through Hole

Turn On Delay Time :

12 ns

Time@Peak Reflow Temperature-Max (s) :

30