IRFU3410PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13 ns

Vgs (Max) :

±20V

Rise Time :

27ns

Lead Free :

Lead Free

Nominal Vgs :

4 V

Number of Terminations :

3

Packaging :

Tube

Power Dissipation :

110W

Transistor Element Material :

SILICON

Length :

6.7056mm

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

40 ns

Current Rating :

31A

Operating Temperature :

-55°C~175°C TJ

Height :

6.22mm

JESD-609 Code :

e3

Series :

HEXFET®

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

39Ohm

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Voltage - Rated DC :

100V

Threshold Voltage :

4V

Power Dissipation-Max :

3W Ta 110W Tc

Dual Supply Voltage :

100V

ECCN Code :

EAR99

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Mount :

Through Hole

Terminal Position :

Single

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Width :

2.3876mm

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Continuous Drain Current (ID) :

31A

Factory Lead Time :

12 Weeks