IRFU3410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Mounting Type :

Through Hole

FET Type :

N-Channel

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3W Ta 110W Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

125A

Drain-source On Resistance-Max :

0.039Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

140 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSIP-T3