IRFU320PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Current Rating :

3.1A

Turn On Delay Time :

10 ns

Number of Pins :

3

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 42W Tc

Number of Channels :

1

Rise Time :

14ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Published :

2008

Continuous Drain Current (ID) :

3.1A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

2.38mm

Radiation Hardening :

No

Pbfree Code :

yes

Length :

6.73mm

JESD-609 Code :

e3

Voltage - Rated DC :

400V

Mount :

Through Hole

Lead Free :

Lead Free

Case Connection :

DRAIN

Vgs (Max) :

±20V

Fall Time (Typ) :

13 ns

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

400V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Weight :

329.988449mg

Power Dissipation :

42W

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 1.9A, 10V

Resistance :

1.8Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Pin Count :

3

Turn-Off Delay Time :

30 ns

Height :

6.22mm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V