IRFU320

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation :

2.5W

Element Configuration :

Single

Number of Elements :

1

Rise Time :

14ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

3.1A

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 1.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Vgs (Max) :

±20V

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn On Delay Time :

10 ns

Published :

2016

Input Capacitance :

350pF

Supplier Device Package :

TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

400V

Turn-Off Delay Time :

30 ns

Drain to Source Resistance :

1.8Ohm

Mount :

Through Hole

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

1.8 Ω

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

2.5W Ta 42W Tc

Max Operating Temperature :

150°C

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA