IRFU2905ZPBF
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- Mfr.Part #
- IRFU2905ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 42A IPAK
- Stock
- 23,387
- In Stock ：
- 23,387
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Input Capacitance :
- 1.38nF
- Supplier Device Package :
- IPAK (TO-251)
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 55V
- Operating Temperature :
- -55°C~175°C TJ
- Rds On Max :
- 14.5 mΩ
- RoHS Status :
- RoHS Compliant
- Series :
- HEXFET®
- Voltage - Rated DC :
- 55V
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 14.5mOhm @ 36A, 10V
- Length :
- 6.7056mm
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Height :
- 6.22mm
- Fall Time (Typ) :
- 35 ns
- Width :
- 2.3876mm
- Drain to Source Resistance :
- 14.5mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 31 ns
- Max Operating Temperature :
- 175°C
- Drain to Source Breakdown Voltage :
- 55V
- Current Rating :
- 42A
- Lead Free :
- Lead Free
- Published :
- 2003
- Continuous Drain Current (ID) :
- 59A
- Power Dissipation :
- 110W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1380pF @ 25V
- Rise Time :
- 66ns
- Turn On Delay Time :
- 14 ns
- Power Dissipation-Max :
- 110W Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins :
- 3
- Packaging :
- Tube
- Datasheets
- IRFU2905ZPBF
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N-Channel Tube 14.5mOhm @ 36A, 10V ±20V 1380pF @ 25V 44nC @ 10V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRFU2905ZPBF Overview
A device's maximum input capacitance is 1380pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 59A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 31 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 14.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFU2905ZPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 14.5mOhm
a 55V drain to source voltage (Vdss)
IRFU2905ZPBF Applications
There are a lot of Infineon Technologies
IRFU2905ZPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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