IRFU2607ZPBF
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- Mfr.Part #
- IRFU2607ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 42A IPAK
- Stock
- 6,118
- In Stock ：
- 6,118
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 110W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 110W Tc
- Recovery Time :
- 27 ns
- Published :
- 2004
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 45A
- FET Type :
- N-Channel
- Termination :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 6.7056mm
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Rise Time :
- 59ns
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 28 ns
- Threshold Voltage :
- 2V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 25V
- Packaging :
- Tube
- Width :
- 2.3876mm
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 30A, 10V
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 39 ns
- Turn On Delay Time :
- 14 ns
- Reverse Recovery Time :
- 30 ns
- Dual Supply Voltage :
- 75V
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 6.22mm
- Datasheets
- IRFU2607ZPBF
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N-Channel Tube 22m Ω @ 30A, 10V ±20V 1440pF @ 25V 51nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU2607ZPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1440pF @ 25V.This device conducts a continuous drain current (ID) of 45A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFU2607ZPBF Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 39 ns
a threshold voltage of 2V
IRFU2607ZPBF Applications
There are a lot of Infineon Technologies
IRFU2607ZPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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