IRFU2405PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.016Ohm

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

56A

Power Dissipation-Max :

110W Tc

Number of Terminations :

3

Width :

2.3876mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Case Connection :

DRAIN

Mount :

Through Hole

Length :

6.7056mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

110W

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Height :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Application :

SWITCHING

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

220A

Fall Time (Typ) :

78 ns

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Rise Time :

130ns

Drain to Source Breakdown Voltage :

55V

Current Rating :

56A

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY