IRFU2307ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

6.22mm

Rise Time :

65ns

Width :

2.3876mm

Recovery Time :

47 ns

Power Dissipation :

110W

Termination :

Through Hole

Published :

2004

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

16mOhm @ 32A, 10V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

FET Type :

N-Channel

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

2.19nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

75V

Reverse Recovery Time :

31 ns

Max Operating Temperature :

175°C

Fall Time (Typ) :

29 ns

Continuous Drain Current (ID) :

53A

Turn On Delay Time :

16 ns

Mount :

Through Hole

Packaging :

Tube

Dual Supply Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 25V

Drain to Source Resistance :

16mOhm

Series :

HEXFET®

Turn-Off Delay Time :

44 ns

Number of Elements :

1

Rds On Max :

16 mΩ

Vgs(th) (Max) @ Id :

4V @ 100µA

Supplier Device Package :

IPAK (TO-251)

Drain to Source Breakdown Voltage :

75V

REACH SVHC :

No SVHC

Length :

6.7056mm

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

110W Tc

Nominal Vgs :

4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V