IRFU224PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

1.1Ohm

RoHS Status :

ROHS3 Compliant

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Radiation Hardening :

No

Weight :

329.988449mg

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Factory Lead Time :

8 Weeks

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 42W Tc

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 2.3A, 10V

Height :

6.22mm

Turn-Off Delay Time :

20 ns

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

250V

Continuous Drain Current (ID) :

3.8A

Width :

2.38mm

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins :

3

Number of Elements :

1

Lead Free :

Lead Free

Rise Time :

13ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

FET Type :

N-Channel

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V