IRFU220PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Turn On Delay Time :

7.2 ns

Turn-Off Delay Time :

19 ns

Current Rating :

4.8A

Packaging :

Tube

Resistance :

800mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

329.988449mg

JESD-609 Code :

e3

Case Connection :

DRAIN

Published :

2016

Power Dissipation :

2.5W

Number of Terminations :

3

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Height :

6.22mm

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

13 ns

Number of Pins :

3

Lead Free :

Lead Free

Number of Channels :

1

REACH SVHC :

Unknown

Power Dissipation-Max :

2.5W Ta 42W Tc

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

4.8A

Rise Time :

22ns

Width :

2.38mm

Pin Count :

3

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.9A, 10V

Threshold Voltage :

4V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Voltage - Rated DC :

200V

Mounting Type :

Through Hole