IRFU220NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Fall Time (Typ) :

12 ns

Resistance :

600Ohm

Avalanche Energy Rating (Eas) :

46 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Nominal Vgs :

4 V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Width :

2.3876mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

200V

Height :

6.22mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

200V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

5A

Pulsed Drain Current-Max (IDM) :

20A

Gate to Source Voltage (Vgs) :

20V

Current Rating :

5A

Recovery Time :

140 ns

Voltage - Rated DC :

200V

Power Dissipation :

43W

Series :

HEXFET®

Published :

2000

Length :

6.7056mm

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.9A, 10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

11ns

Radiation Hardening :

No

Number of Pins :

3

Lead Free :

Contains Lead, Lead Free

Element Configuration :

Single

Case Connection :

DRAIN

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Turn On Delay Time :

6.4 ns

Power Dissipation-Max :

43W Tc

Number of Terminations :

3