IRFU220N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSIP-T3

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Terminal Position :

Single

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

245

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

46 mJ

Drain Current-Max (Abs) (ID) :

5A

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Published :

2000

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain-source On Resistance-Max :

0.6Ohm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

43W Tc

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.9A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Voltage (Vdss) :

200V