IRFU214PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

2Ohm

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Pins :

3

Factory Lead Time :

8 Weeks

Number of Elements :

1

Continuous Drain Current (ID) :

2.2A

Fall Time (Typ) :

7 ns

Turn On Delay Time :

7 ns

FET Type :

N-Channel

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.3A, 10V

Radiation Hardening :

No

Height :

6.22mm

Vgs (Max) :

±20V

Number of Terminations :

3

Mount :

Through Hole

Width :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Channels :

1

REACH SVHC :

Unknown

Published :

2009

Power Dissipation :

2.5W

Length :

6.73mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pulsed Drain Current-Max (IDM) :

8.8A

Threshold Voltage :

4V

DS Breakdown Voltage-Min :

250V

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Power Dissipation-Max :

2.5W Ta 25W Tc

Drain to Source Voltage (Vdss) :

250V

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

329.988449mg

Turn-Off Delay Time :

16 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

7.6ns