IRFU210PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

95 mJ

Weight :

329.988449mg

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.6A, 10V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Fall Time (Typ) :

8.9 ns

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Height :

6.22mm

Power Dissipation :

2.5W

Rise Time :

17ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Length :

6.73mm

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Published :

2016

Pbfree Code :

yes

Turn-Off Delay Time :

14 ns

Width :

2.38mm

Turn On Delay Time :

8.2 ns

Continuous Drain Current (ID) :

2.6A

Resistance :

1.5Ohm

Number of Channels :

1

Number of Terminations :

3

Mounting Type :

Through Hole

Lead Free :

Lead Free

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 25W Tc

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Threshold Voltage :

4V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40