IRFU210
- Mfr.Part #
- IRFU210
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 2.6A TO251AA
- Stock
- 23,218
- In Stock :
- 23,218
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- Turn On Delay Time :
- 8.2 ns
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.6A, 10V
- Rise Time :
- 17ns
- Power Dissipation :
- 2.5W
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Height :
- 6.22mm
- Fall Time (Typ) :
- 8.9 ns
- Continuous Drain Current (ID) :
- 2.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Number of Pins :
- 3
- Length :
- 6.73mm
- Rds On Max :
- 1.5 Ω
- Turn-Off Delay Time :
- 14 ns
- Current Rating :
- 2.6A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 2.38mm
- Drain to Source Voltage (Vdss) :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 329.988449mg
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 200V
- Input Capacitance :
- 140pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Supplier Device Package :
- TO-251AA
- Drain to Source Resistance :
- 1.5Ohm
- Drain to Source Breakdown Voltage :
- 200V
- Published :
- 2016
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Datasheets
- IRFU210
N-Channel Tube 1.5Ohm @ 1.6A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-251-3 Short Leads, IPak, TO-251AA
IRFU210 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 140pF @ 25V.This device has a continuous drain current (ID) of [2.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 14 ns.MOSFETs have 1.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFU210 Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFU210 Applications
There are a lot of Vishay Siliconix
IRFU210 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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