IRFU1N60APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Width :

2.38mm

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

36W Tc

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

600V

REACH SVHC :

Unknown

Number of Elements :

1

Rise Time :

14ns

Continuous Drain Current (ID) :

1.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

229pF @ 25V

Pulsed Drain Current-Max (IDM) :

5.6A

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

9.8 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Height :

6.22mm

Drain-source On Resistance-Max :

7Ohm

Threshold Voltage :

4V

Fall Time (Typ) :

20 ns

Weight :

329.988449mg

Turn-Off Delay Time :

18 ns

Packaging :

Tube

Transistor Application :

SWITCHING

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

36W

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

7 Ω @ 840mA, 10V

Mount :

Through Hole