IRFU1N60A
- Mfr.Part #
- IRFU1N60A
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1.4A TO251AA
- Stock
- 9,495
- In Stock :
- 9,495
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Length :
- 6.73mm
- Fall Time (Typ) :
- 20 ns
- Width :
- 2.38mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Current Rating :
- 1.4A
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 93 mJ
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 7Ohm
- Pin Count :
- 3
- Mount :
- Through Hole
- Published :
- 2016
- Pulsed Drain Current-Max (IDM) :
- 5.6A
- Height :
- 6.22mm
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 229pF @ 25V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 329.988449mg
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 1.4A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 840mA, 10V
- JESD-30 Code :
- R-PSIP-T3
- Rise Time :
- 14ns
- Power Dissipation-Max :
- 36W Tc
- Turn On Delay Time :
- 9.8 ns
- Datasheets
- IRFU1N60A
N-Channel Tube 7 Ω @ 840mA, 10V ±30V 229pF @ 25V 14nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU1N60A Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 93 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 229pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 5.6A.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFU1N60A Features
the avalanche energy rating (Eas) is 93 mJ
a continuous drain current (ID) of 1.4A
the turn-off delay time is 18 ns
based on its rated peak drain current 5.6A.
IRFU1N60A Applications
There are a lot of Vishay Siliconix
IRFU1N60A applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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