IRFU15N20DPBF
- Mfr.Part #
- IRFU15N20DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 17A IPAK
- Stock
- 3,988
- In Stock :
- 3,988
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 200V
- Power Dissipation :
- 140W
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 910pF @ 25V
- Turn On Delay Time :
- 9.7 ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 17 ns
- Rise Time :
- 32ns
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 17A
- Power Dissipation-Max :
- 110W Tc
- Voltage - Rated DC :
- 200V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 17A
- Number of Elements :
- 1
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 10A, 10V
- Fall Time (Typ) :
- 8.9 ns
- Datasheets
- IRFU15N20DPBF
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N-Channel Tube 165m Ω @ 10A, 10V ±30V 910pF @ 25V 41nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU15N20DPBF Overview
A device's maximal input capacitance is 910pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRFU15N20DPBF Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 17 ns
IRFU15N20DPBF Applications
There are a lot of Infineon Technologies
IRFU15N20DPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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