IRFU13N20DPBF
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- Mfr.Part #
- IRFU13N20DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 13A IPAK
- Stock
- 5,436
- In Stock ：
- 5,436
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Published :
- 2000
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Packaging :
- Tube
- Power Dissipation :
- 110W
- Turn On Delay Time :
- 11 ns
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 235m Ω @ 8A, 10V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 52A
- Factory Lead Time :
- 14 Weeks
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Current Rating :
- 13A
- Voltage - Rated DC :
- 200V
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Series :
- HEXFET®
- Rise Time :
- 27ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Width :
- 2.3876mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 830pF @ 25V
- Power Dissipation-Max :
- 110W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Dual Supply Voltage :
- 200V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 13A
- Fall Time (Typ) :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Height :
- 2.39mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Resistance :
- 235mOhm
- Drain to Source Breakdown Voltage :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Mount :
- Through Hole
- Nominal Vgs :
- 5.5 V
- Number of Pins :
- 3
- Length :
- 6.7056mm
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 17 ns
- Datasheets
- IRFU13N20DPBF
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N-Channel Tube 235m Ω @ 8A, 10V ±30V 830pF @ 25V 38nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU13N20DPBF Overview
A device's maximum input capacitance is 830pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.Its maximum pulsed drain current is 52A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFU13N20DPBF Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 52A.
IRFU13N20DPBF Applications
There are a lot of Infineon Technologies
IRFU13N20DPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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