IRFU120ZPBF

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Mfr.Part #
IRFU120ZPBF
Manufacturer
Infineon Technologies
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 100V 8.7A IPAK
Stock
7,514
In Stock :
7,514

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Dual Supply Voltage :
100V
Lead Free :
Lead Free
Input Capacitance :
310pF
Operating Temperature :
-55°C~175°C TJ
Current Rating :
8.7A
RoHS Status :
RoHS Compliant
Resistance :
190mOhm
Current - Continuous Drain (Id) @ 25°C :
8.7A Tc
Supplier Device Package :
IPAK (TO-251)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Power Dissipation-Max :
35W Tc
Drain to Source Resistance :
190mOhm
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
8.7A
Nominal Vgs :
4 V
Mount :
Through Hole
Series :
HEXFET®
Drain to Source Voltage (Vdss) :
100V
Mounting Type :
Through Hole
Termination :
Through Hole
Turn On Delay Time :
8.3 ns
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Min Operating Temperature :
-55°C
Voltage - Rated DC :
100V
Turn-Off Delay Time :
27 ns
Number of Pins :
3
Rds On Max :
190 mΩ
Threshold Voltage :
4V
Length :
6.7056mm
Rise Time :
26ns
Packaging :
Tube
Width :
2.3876mm
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
23 ns
Max Operating Temperature :
175°C
Recovery Time :
36 ns
Power Dissipation :
35W
Height :
6.22mm
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 25V
Published :
2003
Rds On (Max) @ Id, Vgs :
190mOhm @ 5.2A, 10V
Drain to Source Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Datasheets
IRFU120ZPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFU120ZPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, IRFU120ZPBF pinout, IRFU120ZPBF datasheet PDF, IRFU120ZPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFU120ZPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFU120ZPBF


N-Channel Tube 190mOhm @ 5.2A, 10V ±20V 310pF @ 25V 10nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA

IRFU120ZPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 310pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 190mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFU120ZPBF Features


a continuous drain current (ID) of 8.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 190mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRFU120ZPBF Applications


There are a lot of Infineon Technologies
IRFU120ZPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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