IRFU120Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

35A

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

8.7A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Published :

2003

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.19Ohm

Power Dissipation-Max :

35W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas) :

20 mJ

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

190m Ω @ 5.2A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Surface Mount :

No

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V