IRFU1205PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

160A

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain Current-Max (Abs) (ID) :

20A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time (Typ) :

60 ns

Continuous Drain Current (ID) :

44A

Factory Lead Time :

14 Weeks

Mounting Type :

Through Hole

Mount :

Through Hole

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Width :

2.3876mm

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

47 ns

Voltage - Rated DC :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Turn On Delay Time :

7.3 ns

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Power Dissipation-Max :

107W Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Lead Free :

Lead Free

Current Rating :

44A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

69W

Number of Terminations :

3

ECCN Code :

EAR99

Vgs (Max) :

±20V

Height :

6.22mm

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Rise Time :

69ns

Resistance :

27mOhm

Avalanche Energy Rating (Eas) :

210 mJ

Published :

2004

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Radiation Hardening :

No

Transistor Application :

SWITCHING

Length :

6.7056mm

Drive Voltage (Max Rds On,Min Rds On) :

10V