IRFU110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

329.988449mg

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6.9 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Length :

6.73mm

Continuous Drain Current (ID) :

4.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

540m Ω @ 900mA, 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

75 mJ

JESD-609 Code :

e3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Rise Time :

16ns

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

25W

Case Connection :

DRAIN

REACH SVHC :

Unknown

Number of Channels :

1

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation-Max :

25W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Element Configuration :

Single

Packaging :

Tube

Height :

6.22mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Turn-Off Delay Time :

15 ns

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Width :

2.38mm

Resistance :

540mOhm

Fall Time (Typ) :

9.4 ns

Number of Pins :

3