IRFU110

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Mfr.Part #
IRFU110
Manufacturer
Vishay
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 100V 4.3A TO251AA
Stock
5,546
In Stock :
5,546

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
16ns
Mount :
Through Hole
Drain to Source Resistance :
540mOhm
Published :
2017
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
Non-RoHS Compliant
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Through Hole
Rds On Max :
540 mΩ
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
100V
Element Configuration :
Single
Power Dissipation-Max :
25W Tc
FET Type :
N-Channel
Supplier Device Package :
TO-251AA
Number of Pins :
3
Vgs (Max) :
±20V
Voltage - Rated DC :
100V
Input Capacitance :
180pF
Rds On (Max) @ Id, Vgs :
540mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
6.9 ns
Current Rating :
4.7A
Max Operating Temperature :
150°C
Lead Free :
Contains Lead
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
4.3A Tc
Turn-Off Delay Time :
15 ns
Continuous Drain Current (ID) :
4.3A
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Fall Time (Typ) :
9.4 ns
Datasheets
IRFU110
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFU110 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, IRFU110 pinout, IRFU110 datasheet PDF, IRFU110 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFU110 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFU110


N-Channel Tube 540mOhm @ 900mA, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA

IRFU110 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFU110 Features


a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRFU110 Applications


There are a lot of Vishay Siliconix
IRFU110 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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