IRFB3004GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

380W

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Min Operating Temperature :

-55°C

Packaging :

Tube

Series :

HEXFET®

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

90 ns

Package / Case :

TO-220-3

Radiation Hardening :

No

Mounting Type :

Through Hole

Input Capacitance :

9.2nF

Fall Time (Typ) :

130 ns

Number of Pins :

3

Element Configuration :

Single

Number of Elements :

1

Rds On Max :

1.75 mΩ

Rise Time :

220ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.51mm

Rds On (Max) @ Id, Vgs :

1.75mOhm @ 195A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

1.75MOhm

Vgs (Max) :

±20V

Published :

2009

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

195A

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Width :

4.826mm

Length :

10.668mm

Power Dissipation-Max :

380W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

23 ns

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

40V

Supplier Device Package :

TO-220AB