IRFB11N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Weight :

6.000006g

Fall Time (Typ) :

28 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

REACH SVHC :

Unknown

Number of Channels :

1

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

500V

Turn-Off Delay Time :

32 ns

Rds On Max :

520 mΩ

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Element Configuration :

Single

Input Capacitance :

1.423nF

Number of Pins :

3

Drain to Source Resistance :

520mOhm

Packaging :

Tube

Power Dissipation-Max :

170W Tc

Height :

9.01mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

11A

Length :

10.41mm

Power Dissipation :

170W

Resistance :

520mOhm

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

35ns

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Threshold Voltage :

4V

Turn On Delay Time :

14 ns

Current Rating :

11A

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Package / Case :

TO-220-3

Factory Lead Time :

11 Weeks