IRFB17N50LPBF
- Mfr.Part #
- IRFB17N50LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 66,312
- In Stock :
- 66,312
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 320mOhm
- Turn-Off Delay Time :
- 50 ns
- Width :
- 4.7mm
- Power Dissipation :
- 220W
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Channels :
- 1
- Threshold Voltage :
- 5V
- Turn On Delay Time :
- 21 ns
- Continuous Drain Current (ID) :
- 16A
- Recovery Time :
- 250 ns
- Lead Free :
- Lead Free
- Height :
- 9.01mm
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On Max :
- 320 mΩ
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 220W Tc
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 280mOhm
- Fall Time (Typ) :
- 28 ns
- Weight :
- 6.000006g
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Length :
- 10.41mm
- Mount :
- Through Hole
- Element Configuration :
- Single
- Nominal Vgs :
- 5 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Radiation Hardening :
- No
- Rise Time :
- 51ns
- FET Type :
- N-Channel
- Published :
- 2014
- REACH SVHC :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 2760pF @ 25V
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 2.76nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 320mOhm @ 9.9A, 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFB17N50LPBF
N-Channel Tube 320mOhm @ 9.9A, 10V ±30V 2760pF @ 25V 130nC @ 10V 500V TO-220-3
IRFB17N50LPBF Overview
A device's maximal input capacitance is 2760pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 320mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFB17N50LPBF Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
single MOSFETs transistor is 320mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFB17N50LPBF Applications
There are a lot of Vishay Siliconix
IRFB17N50LPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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