IRFB18N50KPBF

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Mfr.Part #
IRFB18N50KPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 17A TO220AB
Stock
1,566
In Stock :
1,566

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55°C
Element Configuration :
Single
Radiation Hardening :
No
Drain to Source Resistance :
290mOhm
Supplier Device Package :
TO-220AB
Current Rating :
18A
Weight :
6.000006g
Published :
2014
Power Dissipation-Max :
220W Tc
Length :
10.41mm
Vgs(th) (Max) @ Id :
5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Max Operating Temperature :
150°C
Number of Elements :
1
Packaging :
Tube
Rise Time :
60ns
Mounting Type :
Through Hole
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
45 ns
Turn On Delay Time :
22 ns
Factory Lead Time :
18 Weeks
Package / Case :
TO-220-3
Power Dissipation :
200W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
2.83nF
REACH SVHC :
Unknown
Mount :
Through Hole
Drain to Source Breakdown Voltage :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
290mOhm @ 10A, 10V
Number of Pins :
3
Termination :
Through Hole
Nominal Vgs :
5 V
Dual Supply Voltage :
500V
Width :
4.7mm
Continuous Drain Current (ID) :
17A
Number of Channels :
1
Threshold Voltage :
5V
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Resistance :
290mOhm
Fall Time (Typ) :
30 ns
Input Capacitance (Ciss) (Max) @ Vds :
2830pF @ 25V
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
500V
Operating Temperature :
-55°C~150°C TJ
Height :
9.01mm
Voltage - Rated DC :
500V
Rds On Max :
290 mΩ
Lead Free :
Lead Free
Datasheets
IRFB18N50KPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB18N50KPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, IRFB18N50KPBF pinout, IRFB18N50KPBF datasheet PDF, IRFB18N50KPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB18N50KPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB18N50KPBF


N-Channel Tube 290mOhm @ 10A, 10V ±30V 2830pF @ 25V 120nC @ 10V 500V TO-220-3

IRFB18N50KPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2830pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 290mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB18N50KPBF Features


a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 290mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFB18N50KPBF Applications


There are a lot of Vishay Siliconix
IRFB18N50KPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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