IRFB11N50A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Continuous Drain Current (ID) :

11A

Mount :

Through Hole

Power Dissipation-Max :

170W Tc

Drain to Source Resistance :

520mOhm

Package / Case :

TO-220-3

Element Configuration :

Single

Turn-Off Delay Time :

32 ns

Rds On Max :

520 mΩ

Max Operating Temperature :

150°C

Input Capacitance :

1.423nF

Power Dissipation :

170W

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Published :

2009

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Channels :

1

Supplier Device Package :

TO-220AB

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

500V

Width :

4.7mm

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Min Operating Temperature :

-55°C

Length :

10.41mm

Height :

9.01mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

FET Type :

N-Channel

Vgs (Max) :

±30V

Rise Time :

35ns

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V