IRFB17N60KPBF
- Mfr.Part #
- IRFB17N60KPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 17A TO220AB
- Stock
- 29,737
- In Stock :
- 29,737
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 420mOhm @ 10A, 10V
- Rds On Max :
- 420 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Weight :
- 6.000006g
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 32 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 420mOhm
- Supplier Device Package :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 99nC @ 10V
- Continuous Drain Current (ID) :
- 17A
- Turn-Off Delay Time :
- 38 ns
- Vgs (Max) :
- ±30V
- Published :
- 2009
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 82ns
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 600V
- Height :
- 9.01mm
- Power Dissipation :
- 340W
- Input Capacitance :
- 2.7nF
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 340W Tc
- Width :
- 4.7mm
- Length :
- 10.41mm
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Turn On Delay Time :
- 25 ns
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Datasheets
- IRFB17N60KPBF
N-Channel Tube 420mOhm @ 10A, 10V ±30V 2700pF @ 25V 99nC @ 10V 600V TO-220-3
IRFB17N60KPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 420mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB17N60KPBF Features
a continuous drain current (ID) of 17A
the turn-off delay time is 38 ns
single MOSFETs transistor is 420mOhm
a 600V drain to source voltage (Vdss)
IRFB17N60KPBF Applications
There are a lot of Vishay Siliconix
IRFB17N60KPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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