IRFB17N60KPBF

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Mfr.Part #
IRFB17N60KPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 17A TO220AB
Stock
29,737
In Stock :
29,737

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
420mOhm @ 10A, 10V
Rds On Max :
420 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Mounting Type :
Through Hole
Element Configuration :
Single
Min Operating Temperature :
-55°C
Vgs(th) (Max) @ Id :
5V @ 250μA
Weight :
6.000006g
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Fall Time (Typ) :
32 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
420mOhm
Supplier Device Package :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
99nC @ 10V
Continuous Drain Current (ID) :
17A
Turn-Off Delay Time :
38 ns
Vgs (Max) :
±30V
Published :
2009
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Rise Time :
82ns
Number of Elements :
1
Drain to Source Voltage (Vdss) :
600V
Height :
9.01mm
Power Dissipation :
340W
Input Capacitance :
2.7nF
Package / Case :
TO-220-3
Power Dissipation-Max :
340W Tc
Width :
4.7mm
Length :
10.41mm
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Turn On Delay Time :
25 ns
Max Operating Temperature :
150°C
Number of Channels :
1
Datasheets
IRFB17N60KPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB17N60KPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Channels:1, IRFB17N60KPBF pinout, IRFB17N60KPBF datasheet PDF, IRFB17N60KPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB17N60KPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB17N60KPBF


N-Channel Tube 420mOhm @ 10A, 10V ±30V 2700pF @ 25V 99nC @ 10V 600V TO-220-3

IRFB17N60KPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 420mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB17N60KPBF Features


a continuous drain current (ID) of 17A
the turn-off delay time is 38 ns
single MOSFETs transistor is 420mOhm
a 600V drain to source voltage (Vdss)


IRFB17N60KPBF Applications


There are a lot of Vishay Siliconix
IRFB17N60KPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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