IRFB13N50A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

14A

Drain to Source Resistance :

450mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Width :

4.7mm

Drain to Source Breakdown Voltage :

500V

Height :

9.01mm

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

14A Tc

FET Type :

N-Channel

Length :

10.41mm

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Rise Time :

39ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Input Capacitance :

1.91nF

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1910pF @ 25V

Turn On Delay Time :

15 ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

450mOhm @ 8.4A, 10V

Supplier Device Package :

TO-220AB

Fall Time (Typ) :

31 ns

Published :

2016

Number of Pins :

3

Rds On Max :

450 mΩ

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Power Dissipation-Max :

250W Tc

Turn-Off Delay Time :

39 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole