IRFB13N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

14A

Width :

4.7mm

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

450mOhm @ 8.4A, 10V

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Supplier Device Package :

TO-220AB

Mounting Type :

Through Hole

Power Dissipation :

250W

Factory Lead Time :

11 Weeks

Fall Time (Typ) :

31 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

250W Tc

Rds On Max :

450 mΩ

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

450mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1910pF @ 25V

Number of Pins :

3

Height :

9.01mm

Weight :

6.000006g

Max Operating Temperature :

150°C

Nominal Vgs :

4 V

Drain to Source Resistance :

450mOhm

Min Operating Temperature :

-55°C

Element Configuration :

Single

Published :

2014

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

39ns

Lead Free :

Lead Free

Threshold Voltage :

4V

Length :

10.41mm

Turn-Off Delay Time :

39 ns

Mount :

Through Hole

FET Type :

N-Channel

Vgs (Max) :

±30V

Input Capacitance :

1.91nF

REACH SVHC :

No SVHC

Dual Supply Voltage :

500V