IRF9956PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6.2 ns

Mounting Type :

Surface Mount

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Threshold Voltage :

1V

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Base Part Number :

IRF9956PBF

Avalanche Energy Rating (Eas) :

44 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Fall Time (Typ) :

3 ns

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

8.8ns

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Current Rating :

3.5A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Width :

4.05mm

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.5A

Nominal Vgs :

1 V

Length :

5mm

Voltage - Rated DC :

30V

Height :

1.5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HEXFET®

Transistor Application :

SWITCHING

Published :

2003

Transistor Element Material :

SILICON

Turn-Off Delay Time :

13 ns

Number of Terminations :

8

Resistance :

100MOhm

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

16A

Terminal Form :

Gull wing