IRF9328PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Published :

2004

Height :

1.4986mm

Drain to Source Breakdown Voltage :

-30V

Vgs (Max) :

±20V

Fall Time (Typ) :

66 ns

Turn-Off Delay Time :

80 ns

REACH SVHC :

No SVHC

Recovery Time :

76 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Power Dissipation :

2.5W

Length :

4.9784mm

Pulsed Drain Current-Max (IDM) :

96A

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

ECCN Code :

EAR99

Series :

HEXFET®

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Nominal Vgs :

-1.8 V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Number of Terminations :

8

Mounting Type :

Surface Mount

Threshold Voltage :

-1.8V

Width :

3.9878mm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 12A, 10V

Rise Time :

57ns

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Continuous Drain Current (ID) :

-12A

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

19 ns