IRF9328PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

19 ns

Rise Time :

57ns

Width :

3.9878mm

Recovery Time :

76 ns

Packaging :

Tube

Height :

1.4986mm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

66 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Threshold Voltage :

-1.8V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

FET Type :

P-Channel

Nominal Vgs :

-1.8 V

Vgs (Max) :

±20V

Number of Pins :

8

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Length :

4.9784mm

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-12A

Pulsed Drain Current-Max (IDM) :

96A

Number of Terminations :

8

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

REACH SVHC :

No SVHC

Published :

2004

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

ECCN Code :

EAR99

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

-30V

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 12A, 10V