IRF9310PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Nominal Vgs :

-1.8 V

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

630 mJ

Number of Elements :

1

Number of Pins :

8

Factory Lead Time :

22 Weeks

Rise Time :

47ns

Width :

3.9878mm

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Series :

HEXFET®

Terminal Position :

Dual

Lead Free :

Lead Free

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Continuous Drain Current (ID) :

-20A

Published :

2010

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

107 ns

Length :

4.9784mm

Turn On Delay Time :

25 ns

Drain to Source Breakdown Voltage :

-30V

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Single

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5250pF @ 15V

Contact Plating :

Tin

JESD-30 Code :

R-PDSO-G3

Case Connection :

DRAIN

Fall Time (Typ) :

70 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Height :

1.75mm

Power Dissipation :

2.5W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Turn-Off Delay Time :

65 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Resistance :

4.6mOhm

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Number of Terminations :

8

Threshold Voltage :

-1.8V

REACH SVHC :

No SVHC