IRF9317TRPBF
- Mfr.Part #
- IRF9317TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 16A 8SO
- Stock
- 81,441
- In Stock :
- 81,441
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- -16A
- Rds On (Max) @ Id, Vgs :
- 6.6m Ω @ 16A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Height :
- 1.4986mm
- Resistance :
- 10.2mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 15V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Turn On Delay Time :
- 19 ns
- Transistor Element Material :
- SILICON
- Length :
- 4.9784mm
- Drain to Source Breakdown Voltage :
- -30V
- Vgs(th) (Max) @ Id :
- 2.4V @ 50μA
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 2.5W
- Rise Time :
- 64ns
- Mount :
- Surface Mount
- Published :
- 2009
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 160 ns
- Threshold Voltage :
- -1.8V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 3.9878mm
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Series :
- HEXFET®
- Power Dissipation-Max :
- 2.5W Ta
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- -1.8 V
- Fall Time (Typ) :
- 120 ns
- Datasheets
- IRF9317TRPBF
IRF9317TRPBF Documents

P-Channel Tape & Reel (TR) 6.6m Ω @ 16A, 10V ±20V 2820pF @ 15V 92nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF9317TRPBF Description
IRF9317TRPBF is a -30V Single P-Channel HEXFET Power MOSFET. The Infineon IRF9317TRPBF features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF9317TRPBF is in the SOIC-8 package with 2.5W power dissipation.
IRF9317TRPBF Features
-
Optimized for broadest availability from distribution partners
-
Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
-
Reduced design complexity in high-side configuration (vs N-channel device)
-
Easier interface to Microcontroller (vs N-channel device)
IRF9317TRPBF Applications
-
Charge and Discharge Switch for Notebook PC Battery Application
-
DC motor drive
-
High-efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High-speed power switching
-
Hard switched and high-frequency circuits
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