IRF9317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-16A

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 16A, 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Height :

1.4986mm

Resistance :

10.2mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

Element Configuration :

Single

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

19 ns

Transistor Element Material :

SILICON

Length :

4.9784mm

Drain to Source Breakdown Voltage :

-30V

Vgs(th) (Max) @ Id :

2.4V @ 50μA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Avalanche Energy Rating (Eas) :

330 mJ

Contact Plating :

Tin

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Power Dissipation :

2.5W

Rise Time :

64ns

Mount :

Surface Mount

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Terminal Form :

Gull wing

Turn-Off Delay Time :

160 ns

Threshold Voltage :

-1.8V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Number of Terminations :

8

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

FET Type :

P-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-1.8 V

Fall Time (Typ) :

120 ns