IRF9317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Nominal Vgs :

-1.8 V

REACH SVHC :

No SVHC

Number of Pins :

8

Avalanche Energy Rating (Eas) :

330 mJ

Threshold Voltage :

-1.8V

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 16A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

120 ns

Series :

HEXFET®

Turn On Delay Time :

19 ns

Turn-Off Delay Time :

160 ns

Drain to Source Voltage (Vdss) :

30V

Length :

4.9784mm

Radiation Hardening :

No

Number of Terminations :

8

Height :

1.4986mm

Resistance :

10.2mOhm

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Width :

3.9878mm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Rise Time :

64ns

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Published :

2009

Power Dissipation :

2.5W

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Elements :

1

Continuous Drain Current (ID) :

-16A

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

16A Ta