IRF9332PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Fall Time (Typ) :

58 ns

Width :

4mm

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

9.8A

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 9.8A, 10V

Power Dissipation :

2.5W

Nominal Vgs :

-1.9 V

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Number of Elements :

1

Height :

1.5mm

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Number of Pins :

8

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 25V

FET Type :

P-Channel

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V

Published :

2006

Series :

HEXFET®

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

73 ns

Rise Time :

47ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Threshold Voltage :

-1.9V

REACH SVHC :

No SVHC

Recovery Time :

54 ns

RoHS Status :

ROHS3 Compliant