IRF9310TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.8V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

25 ns

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Length :

4.9784mm

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-20A

Series :

HEXFET®

Transistor Element Material :

SILICON

Terminal Position :

Dual

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Terminations :

8

Case Connection :

DRAIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

FET Type :

P-Channel

Width :

3.9878mm

Fall Time (Typ) :

70 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Vgs (Max) :

±20V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Published :

2008

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Avalanche Energy Rating (Eas) :

630 mJ

Height :

1.4986mm

JESD-30 Code :

R-PDSO-G3

Rise Time :

47ns

Resistance :

4.6mOhm

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Pins :

8

Nominal Vgs :

-1.8 V

Turn-Off Delay Time :

65 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5250pF @ 15V

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V