IRF9310TRPBF

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Mfr.Part #
IRF9310TRPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 20A 8SO
Stock
63,638
In Stock :
63,638

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Series :
HEXFET®
ECCN Code :
EAR99
Radiation Hardening :
No
Contact Plating :
Tin
Number of Elements :
1
Resistance :
4.6mOhm
Nominal Vgs :
-1.8 V
Vgs (Max) :
±20V
Published :
2008
Threshold Voltage :
-1.8V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Factory Lead Time :
12 Weeks
Power Dissipation-Max :
2.5W Ta
Input Capacitance (Ciss) (Max) @ Vds :
5250pF @ 15V
Drain to Source Voltage (Vdss) :
30V
Mount :
Surface Mount
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Length :
4.9784mm
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-30V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
630 mJ
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Rds On (Max) @ Id, Vgs :
4.6m Ω @ 20A, 10V
Number of Pins :
8
Number of Terminations :
8
Terminal Position :
Dual
Power Dissipation :
2.5W
REACH SVHC :
No SVHC
Turn On Delay Time :
25 ns
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Width :
3.9878mm
Continuous Drain Current (ID) :
-20A
FET Type :
P-Channel
Fall Time (Typ) :
70 ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Mode :
ENHANCEMENT MODE
Rise Time :
47ns
JESD-30 Code :
R-PDSO-G3
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2.4V @ 100μA
Height :
1.4986mm
Case Connection :
DRAIN
Turn-Off Delay Time :
65 ns
Datasheets
IRF9310TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF9310TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), IRF9310TRPBF pinout, IRF9310TRPBF datasheet PDF, IRF9310TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF9310TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF9310TRPBF


P-Channel Tape & Reel (TR) 4.6m Ω @ 20A, 10V ±20V 5250pF @ 15V 165nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

IRF9310TRPBF Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 630 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5250pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1.8V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF9310TRPBF Features


the avalanche energy rating (Eas) is 630 mJ
a continuous drain current (ID) of -20A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 65 ns
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)


IRF9310TRPBF Applications


There are a lot of Infineon Technologies
IRF9310TRPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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