IRF9952QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

2.3A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Rds On Max :

100 mΩ

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

100mOhm @ 2.2A, 10V

Input Capacitance :

190pF

Mounting Type :

Surface Mount

Radiation Hardening :

No

Base Part Number :

IRF9952QPBF

RoHS Status :

RoHS Compliant

Supplier Device Package :

8-SO

Length :

4.9784mm

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Power - Max :

2W

Mount :

Surface Mount

Height :

1.4986mm

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

FET Type :

N and P-Channel

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

2W

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Max Operating Temperature :

150°C

Published :

2014

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V