IRF7910TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Height :

1.4986mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

12V

Width :

3.9878mm

Published :

2002

Vgs(th) (Max) @ Id :

2V @ 250μA

Max Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 6V

Base Part Number :

IRF7910PBF

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Resistance :

15mOhm

Turn-Off Delay Time :

16 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lead Free :

Lead Free

Mount :

Surface Mount

JEDEC-95 Code :

MS-012AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Continuous Drain Current (ID) :

10A

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Power Dissipation :

2W

Mounting Type :

Surface Mount

Element Configuration :

Single

FET Feature :

Logic Level Gate

Series :

HEXFET®

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 4.5V

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9.4 ns

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

6.3 ns

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ