IRF7910PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Dual

Current Rating :

10A

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Nominal Vgs :

2 V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.015Ohm

Packaging :

Tube

Dual Supply Voltage :

12V

Width :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 6V

Threshold Voltage :

2V

Turn On Delay Time :

9.4 ns

Voltage - Rated DC :

12V

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Power Dissipation :

2W

Termination :

SMD/SMT

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Pins :

8

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 4.5V

Published :

2004

Continuous Drain Current (ID) :

10A

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

IRF7910PBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Series :

HEXFET®

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Drain to Source Breakdown Voltage :

12V

Lead Free :

Lead Free

Mount :

Surface Mount

Turn-Off Delay Time :

16 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Rise Time :

22ns

Height :

1.5mm

Number of Elements :

2

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

6.3 ns

Number of Terminations :

8