IRF7907TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Published :

2008

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2W

Lead Free :

Lead Free

Base Part Number :

IRF7907PBF

Current - Continuous Drain (Id) @ 25°C :

9.1A 11A

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 15V

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Continuous Drain Current (ID) :

11A

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Length :

4.9784mm

Avalanche Energy Rating (Eas) :

15 mJ

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

JESD-609 Code :

e3

Height :

1.4986mm

Mount :

Surface Mount

Radiation Hardening :

No

Max Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

16.4m Ω @ 9.1A, 10V

Width :

3.9878mm

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ