IRF7905TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.4 ns

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

IRF7905PBF

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Element Configuration :

Dual

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

21.8m Ω @ 7.8A, 10V

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

ECCN Code :

EAR99

Mount :

Surface Mount

Max Power Dissipation :

2W

Series :

HEXFET®

Continuous Drain Current (ID) :

8.9A

Number of Elements :

2

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2W

Number of Terminations :

8

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0171Ohm

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Pulsed Drain Current-Max (IDM) :

71A

Number of Pins :

8

Length :

4.9784mm

Published :

2008

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.4986mm

Current - Continuous Drain (Id) @ 25°C :

7.8A 8.9A

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)