IRF7905PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tube

Resistance :

21.8MOhm

Mount :

Surface Mount

Power Dissipation :

2W

Input Capacitance :

600pF

Max Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V

Recovery Time :

15 ns

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Current - Continuous Drain (Id) @ 25°C :

7.8A 8.9A

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

21.8mOhm @ 7.8A, 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

Element Configuration :

Dual

Width :

3.9878mm

Rise Time :

9.3ns

Max Operating Temperature :

150°C

Height :

1.4986mm

REACH SVHC :

No SVHC

Length :

4.9784mm

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Base Part Number :

IRF7905PBF

Continuous Drain Current (ID) :

8.9A

Fall Time (Typ) :

3.4 ns

Drain to Source Resistance :

21.3mOhm

Voltage - Rated DC :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Rds On Max :

21.8 mΩ

Power - Max :

2W

Published :

2004

Number of Elements :

2

Current Rating :

7.8A

Supplier Device Package :

8-SO

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

8.1 ns

Threshold Voltage :

1.8V