IRF7904TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

11A

Width :

3.9878mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2.25V @ 25μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Number of Pins :

8

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

16.2m Ω @ 7.6A, 10V

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Power - Max :

1.4W 2W

Number of Elements :

2

Number of Terminations :

8

Resistance :

16.2MOhm

JESD-609 Code :

e3

Element Configuration :

Dual

Base Part Number :

IRF7904PBF

Current - Continuous Drain (Id) @ 25°C :

7.6A 11A

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Drain to Source Breakdown Voltage :

30V

Length :

4.9784mm

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 15V

Height :

1.4986mm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing